GaAsP/InGaP heterojunction bipolar transistors grown by MOCVD
نویسندگان
چکیده
منابع مشابه
GaAsP/InGaP heterojunction bipolar transistors grown by MOCVD
Heterojunction bipolar transistors with GaAsxP1-x bases and collectors and InyGa1-yP emitters were grown on GaAs substrates via metalorganic chemical vapor deposition (MOCVD), fabricated using conventional techniques, and electrically tested. Four different GaAsxP1-x compositions were used, ranging from x = 0.825 to x = 1 (GaAs), while the InyGa1-yP composition was adjusted to remain lattice-ma...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2017
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.4974969